Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

摘要

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low andhigh substrate temperatures. The films were investigated using Hall effect andphotoluminescence (PL) measurements from 8 to 300 K. The carrier concentrationsin the samples grown at a low substrate temperature are greater than those inthe samples grown at a high substrate temperature. The PL spectra show a GaAsexciton peak, a peak involving a carbon acceptor, a substitutional Mnacceptor-related peak and an optical phonon-related peak.